Molecular dynamics simulation of CH₃ interaction with Si(100) surfaceGOU, F; GLEESON, M. A; KLEYN, A. W et al.Surface science. 2007, Vol 601, Num 18, pp 3965-3969, issn 0039-6028, 5 p.Conference Paper

Study of the TiSi interface formed by Ti deposition on a clean Si (100) surface A periodic DFT studyANEZ, Rafael; SAN-MIGUEL, Miguel A; FDEZ SANZ, Javier et al.Surface science. 2012, Vol 606, Num 7-8, pp 754-761, issn 0039-6028, 8 p.Article

Electrodeposition of NiFe films on Si(100) substrateSAM, S; FORTAS, G; GUITTOUM, A et al.Surface science. 2007, Vol 601, Num 18, pp 4270-4273, issn 0039-6028, 4 p.Conference Paper

The effects of the nitrogen on the electrical and structural properties of the diamond-like carbon (DLC) filmsGUERINO, M; MASSI, M; MACIEL, H. S et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 639-641, issn 0959-8324, 3 p.Conference Paper

Substantially low desorption barriers in recombinative desorption of deuterium from a Si(100) surfaceNARITA, Y; KIHARA, Y; INANAGA, S et al.Surface science. 2009, Vol 603, Num 9, pp 1168-1174, issn 0039-6028, 7 p.Article

CF₃ interaction with Si(100)-(2× 1) : Molecular dynamics simulationGOU, F; GLEESON, M. A; KLEYN, A. W et al.Surface science. 2007, Vol 601, Num 18, pp 4250-4255, issn 0039-6028, 6 p.Conference Paper

Multiscale analysis for dissociative adsorption of SiH₄ on Si(100) surfaceSAKIYAMA, Y; IGA, Y; YAMAGUCHI, H et al.Surface & coatings technology. 2006, Vol 200, Num 10, pp 3385-3388, issn 0257-8972, 4 p.Conference Paper

Initial oxidation of HF-acid treated Si(100) surfaces under air exposure studied by synchrotron radiation X-ray photoelectron spectroscopyHIROSE, F; NAGATO, M; KINOSHITA, Y et al.Surface science. 2007, Vol 601, Num 11, pp 2302-2306, issn 0039-6028, 5 p.Article

Interaction of 2,2,6,6-tetramethyl-3,5-heptanedione with the Si(100)-2 × 1 surface : Scanning tunneling microscopy and density functional theory studySKLIAR, D. B; GELMI, C; OGUNNAIKE, T et al.Surface science. 2007, Vol 601, Num 14, pp 2887-2895, issn 0039-6028, 9 p.Article

Germanium growth on Br-terminated Si(100)TRENHAILE, B. R; XU, G. J; WEAVER, J. H et al.Surface science. 2006, Vol 600, Num 14, pp 2907-2912, issn 0039-6028, 6 p.Article

Growth of silver structures on silicon surfaces observed in vivo by scanning tunneling microscopyKOCAN, P; OST'ADAL, I; SOBOTIK, P et al.Surface science. 2006, Vol 600, Num 18, pp 3928-3931, issn 0039-6028, 4 p.Conference Paper

A new strongly-bound chemisorption structure of benzene on Si(100)HARIKUMAR, K. R; POLANYI, John C; ZABET-KHOSOUSI, Amir et al.Surface science. 2012, Vol 606, Num 17-18, pp 1431-1434, issn 0039-6028, 4 p.Article

Chemisorption of cis-2-butene-1,4-diol on Si(100): A theoretical investigationDO HWAN KIM.Surface science. 2012, Vol 606, Num 15-16, pp 1268-1273, issn 0039-6028, 6 p.Article

Epitaxial silicon overgrowth of C₆₀ on the Si(100)-2 × 1 surfaceSENFTLEBEN, Oliver; STIMPEL-LINDNER, Tanja; EISELE, Ignaz et al.Surface science. 2008, Vol 602, Num 2, pp 493-498, issn 0039-6028, 6 p.Article

Configuration of pentacene (C₂₂H₁₄) films on Si(100)-2 × 1 studied by NEXAFSLEE, Han-Koo; HAN, Jin-Hee; KIM, Ki-Jeong et al.Surface science. 2007, Vol 601, Num 6, pp 1456-1460, issn 0039-6028, 5 p.Article

Growth of In nanocrystallite arrays on the Si(100)-c(4× 12)-Al surfaceGRUZNEV, D. V; OLYANICH, D. A; AVILOV, V. A et al.Surface science. 2006, Vol 600, Num 22, pp 4986-4991, issn 0039-6028, 6 p.Article

Diffusion-promoted-desorption mechanism for D₂ desorption from Si(100) surfacesNARITA, Y; INANAGA, S; UNOKO, C et al.Surface science. 2011, Vol 605, Num 1-2, pp 32-39, issn 0039-6028, 8 p.Article

Adsorption geometry of furan on Si(100)-2 x 1LEE, Han-Koo; KIM, Ki-Jeong; KANG, Tai-Hee et al.Surface science. 2008, Vol 602, Num 4, pp 914-918, issn 0039-6028, 5 p.Article

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTsCHUNG, Jinwook W; LEE, Jae-Kyu; PINER, Edwin L et al.IEEE electron device letters. 2009, Vol 30, Num 10, pp 1015-1017, issn 0741-3106, 3 p.Article

Oxynitridation of Si(100) surface with thermally excited N₂O gasENTA, Y; SUTO, K; TAKEDA, S et al.Thin solid films. 2006, Vol 500, Num 1-2, pp 129-132, issn 0040-6090, 4 p.Article

Impact of STM tip on coarsening of In atomic chains on Si(100): A kinetic Monte Carlo studyALBAO, Marvin A.Surface science. 2014, Vol 625, pp 90-96, issn 0039-6028, 7 p.Article

First-principles study of near surface point defects stability in Si (100) and SiGe( 100)FETAH, S; CHIKOUCHE, A; DKHISSI, A et al.Thin solid films. 2010, Vol 518, Num 9, pp 2418-2421, issn 0040-6090, 4 p.Conference Paper

Influence of chemical additives on the surface reactivity of Si in KOH solutionPHILIPSEN, Harold G. G; KELLY, John J.Electrochimica acta. 2009, Vol 54, Num 13, pp 3526-3531, issn 0013-4686, 6 p.Article

Chemisorption of tert-butanol on Si(100)CHEN, T.-L; YILMAZ, M. B; POTAPENKO, D et al.Surface science. 2008, Vol 602, Num 21, pp 3432-3437, issn 0039-6028, 6 p.Article

Hreels, TPD and ESD study of electron-induced decomposition of trimethylamine on Si(100) at 100 K⁺LOZANO, J; EARLY, D; CRAIG, J. H et al.Surface and interface analysis. 2005, Vol 37, Num 4, pp 366-373, issn 0142-2421, 8 p.Conference Paper